Method for manufacturing NAND flash device

ABSTRACT

Disclosed is a method for manufacturing a NAND flash device. After a source line plug hole is formed, a drain contact plug hole is formed. The holes are filled with a conductive material film and are then polished. It is therefore possible to simplify the process since a blanket etch process step is omitted. Moreover, loss of a drain contact plug by the blanket etch process is prevented. It is therefore possible to improve the electrical properties of a device and reduce the manufacturing cost price.

BACKGROUND

1. Field of the Invention

The present invention relates to a method for manufacturing a NAND flashdevice, and, more specifically, to a method for forming a drain contactand a source contact in a NAND flash device.

2. Discussion of Related Art

A cell array of a NAND flash device is connected in a string unlike acommon flash device. Due to this property, a drain contact and a sourceline contact for a global ground, which are connected by a bit line, arelocated at both ends of the string. These contacts are connected to thejunction of a select transistor for string control.

FIG. 1 is a cross-sectional view shown to explain a method formanufacturing a flash device in a prior art.

FIG. 2 is a SEM photography for explaining conventional problems.

Referring to FIG. 1 and FIG. 2, a first interlayer insulating film 12 isformed on a semiconductor substrate 10 on which a cell string 20 forstoring electrical information therein, a drain select transistor 30 forselecting a drain terminal of the cell string 20 and a source selecttransistor 40 for selecting a source terminal of the cell string 20 areformed.

The first interlayer insulating film 12 on a source region of the sourceselect transistor 40 is removed by a predetermined etch process, thusforming a source line contact hole. After a polysilicon film isdeposited, a chemical mechanical polishing using the first interlayerinsulating film 12 as a stop layer is implemented to fill the sourceline contact with polysilicon, so that a source line plug 14 is formed.

A second interlayer insulating film 16 is formed. A photoresist pattern(not shown) through which a drain contact region is opened is thenformed. The second and first interlayer insulating film 12 and 16 on adrain region of the drain select transistor 30 are removed by means ofan etch process using the photoresist pattern as an etch mask, forming adrain contact hole. After a polysilicon film is deposited, thepolysilicon film on the second interlayer insulating film 16 is removedby means of a blanket etch process. Thus, the drain contact hole isfilled with polysilicon, forming a drain contact plug 18. In case of theblanket etch process, there is a danger that excessive plug poly withinthe contact may be lost (see “A” region in FIG. 1). Further, the blanketetch process is disadvantageous in view of process control. Excessiveloss of plug poly causes a part of a nitride film for etch stop due tolack of an etch target to remain when a bit line contact and a bit lineare formed by means of a subsequent damascene process. It results indegradation of electrical properties in the device (see FIG. 2).

Furthermore, one of the most critical things in the processes of formingthe contacts in the NAND flash device is a formation of a drain contact.In an etch process for forming the drain contact of a NAND flash deviceof below 100 nm class, a margin of photoresist film is lowered.Accordingly, there is a problem that reduction in a thickness of thephotoresist film is greater than reduction in a thickness of the secondinterlayer insulating film when the contact is etched. As describedabove, the drain contact plug and the source line plug are formed usingindependent processes. Accordingly, there is a problem that theproductivity is low since a total number of masks and process steps areincreased. Furthermore, it is difficult to control an overlay since eachcontact plug and independent mask alignment are required.

SUMMARY OF THE INVENTION

The present invention is contrived to solve the aforementioned problem.An object of the present invention is to provide a method formanufacturing a NAND flash device wherein after a source contact plug isformed, a drain contact is formed in the same level, whereby a plugformation process by the blanket etch is omitted and a process margin issecured due to reduction in a thickness of an etch layer when the draincontact is formed.

According to an aspect of the present invention, there is provided amethod for manufacturing a NAND flash device, comprising the steps of:providing a semiconductor substrate on which a drain select transistorfor selecting a drain terminal of a flash cell and a source selecttransistor for selecting a source terminal of the flash cell, whereinthe drain select transistor and the source select transistor have drainregion and a source region on the surface of the semiconductorsubstrate; forming a first interlayer insulating film over thesemiconductor substrate; removing a portion of the first interlayerinsulating film to form a source line contact hole, wherein the sourceregion of the source select transistor is exposed at the bottom of thesource line contact hole; removing a portion of the first interlayerinsulating film to form a drain contact hole, wherein the drain regionof the drain select transistor is exposed at the bottom of the draincontact hole; forming a source line plug and a drain contact plug in thesource line contact hole and the drain contact hole, respectively; andforming a bit line connected to the drain contact plug and a commonsource line contact connected to the source line plug.

According to an aspect of the present invention, there is provided amethod for manufacturing a NAND flash device, comprising the steps of:providing a semiconductor substrate on which a drain select transistorfor selecting a drain terminal of a flash cell and a source selecttransistor for selecting a source terminal of the flash cell, whereinthe drain select transistor and the source select transistor have drainregion and a source region on the surface of the semiconductorsubstrate; forming a first interlayer insulating film over thesemiconductor substrate; removing a portion of the first interlayerinsulating film to form a source line contact hole, wherein the sourceregion of the source select transistor is exposed at the bottom of thesource line contact hole; removing a portion of the first interlayerinsulating film to form a drain contact hole, wherein the drain regionof the drain select transistor is exposed at the bottom of the draincontact hole; forming a source line plug and a drain contact plug in thesource line contact hole and the drain contact hole, respectively;forming a second interlayer insulating film over the semiconductorsubstrate including the source line plug and the drain contact plug;forming an etch-stop layer on the second interlayer insulating layer;forming a third interlayer insulating film on etch-stop layer;selectively etching the third interlayer insulating film, the etch-stoplayer and portions of the second interlayer insulating layer and forminga first trench over the drain contact plug and a second trench over thesource line plug, wherein the first trench is larger than the secondtrench; selectively removing the second interlayer insulating layer andforming a first via hole under the first trench and the second via holeunder the second trench, wherein the first via hole exposes the draincontact plug and the second via hole exposes the source line plug;filling the first trench, the second trench, the first via hole and thesecond via hole with a metal film; and forming a bit line passing thefirst trench and the first via hole and a common source line contactpassing the second trench and the second via hole by polishing the metalfilm.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view shown to explain a method formanufacturing a flash device in the related art;

FIG. 2 is a SEM photography for explaining conventional problems;

FIG. 3 shows an array of a NAND flash device according to the presentinvention;

FIG. 4A to FIG. 4G are cross-sectional views illustrating the NAND flashdevice taken along lines III-III′ in FIG. 3 in order to explain a methodfor manufacturing a NAND flash device according to the presentinvention;

FIG. 5 is a SEM photography after a source contact is etched; and

FIG. 6 is a SEM photography after a drain contact hole is formed.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Now the preferred embodiments according to the present invention will bedescribed with reference to the accompanying drawings. Since preferredembodiments are provided for the purpose that the ordinary skilled inthe art are able to understand the present invention, they may bemodified in various manners and the scope of the present invention isnot limited by the preferred embodiments described later. Like referencenumerals are used to identify the same or similar parts.

FIG. 3 shows an array of a NAND flash device according to the presentinvention.

FIG. 4A to FIG. 4G are cross-sectional views illustrating the NAND flashdevice taken along lines III-III′ in FIG. 3 in order to explain a methodfor manufacturing a NAND flash device according to the presentinvention.

FIG. 5 is a SEM photography after a source contact is etched.

Referring to FIG. 3, FIG. 4A and FIG. 5, a first interlayer insulatingfilm 112 is formed on a semiconductor substrate 110 on which a NANDflash cell 120, a drain select transistor 130 for selecting a drainterminal of the flash cell 120, and a source select transistor 140 forselecting a source terminal of the flash cell 120 are formed. It ispreferred that the first interlayer insulating film 112 is formed tohave a stacked structure consisting of an oxide film and a dielectricfilm. The oxide film is formed to protect the flash cell 120 and atransistor, and the dielectric material is formed to insulate eachlayer. The first interlayer insulating film 112 is patterned to form asource line contact hole 114.

In the above, in the formation of the NAND flash cell 120 and the drainand source select transistors 130 and 140, it is preferred that a screenoxide film (not shown) that serves to prohibit crystal defects on thesubstrate and serves as a buffer layer upon surface treatment and ionimplantation is deposited on the semiconductor substrate 10. An ionimplantation process is preferably carried out to form a well and an ionlayer (not shown) for controlling the threshold voltage. It is alsoeffective to form the well in a triple shape. After the screen oxidefilm is removed, a tunnel oxide film (not shown), a first conductivefilm (not shown) and a pad nitride film (not shown) are deposited.

After a photoresist film is covered on the pad nitride film, aphotolithography process using a photoresist film mask is performed toform a photoresist pattern (not shown). The pad nitride film, the firstconductive film, the tunnel oxide film and the semiconductor substrateare etched by means of an etch process using the photoresist pattern asan etch mask, thus forming a trench of a shallow trench isolation (STI)structure. A high-density plasma (HDP) oxide film is deposited to fillthe trench. It is preferred that an isolation film is formed by removingthe HDP oxide film on the pad nitride film by means of a polishingprocess using the pad nitride film as a stop layer.

The pad nitride film is experienced by a dipping-out with H₃PO₄ so thata portion of the isolation film is exposed. A native oxide film and theremnants formed on the first conductive film are removed by means of apre-treatment cleaning process using DHF. After a second conductive film(not shown) is deposited, a portion of the second conductive film ispatterned to form a floating gate electrode.

A dielectric film (not shown) is deposited in conformity to an entirestructure including the floating gate. A third conductive film (notshown) for forming a control gate, a tungsten silicide (WSi_(x)) filmand a hard mask film (not shown) are then sequentially deposited. It ispreferable that the dielectric film has an ONO (SiO₂—Si₃N₄—SiO₂)structure. A gate mask and etching process and a self-aligned mask andetching process are performed to form a control gate electrode, so thatthe gate electrode for the flash cell and the gate electrode for thetransistor are formed. Next, an ion implantation process is carried outto form source/drain. In order to protect the gate electrodes formed asabove, it is effective that an oxide film is formed on an entirestructure including the gate electrodes in the ion implantation process.

A source line contact hole is formed as follows.

A photoresist film is covered on the first interlayer insulating film112. A photolithography process using a photoresist film mask is thenimplemented to form a first photoresist pattern (not shown) throughwhich a source line region is opened. It is effective that the sourceregion of the source select transistor 140 is opened since the device isa NAND flash device. The first interlayer insulating film 112 is removedby means of an etch process using the first photoresist pattern as anetch mask, thus forming a source line contact hole 114. The firstphotoresist pattern is removed by means of a predetermined photoresistfilm strip process.

FIG. 6 is a SEM photography after a drain contact hole is formed.

Referring to FIG. 3, FIG. 4B, FIG. 4C and FIG. 6, the first interlayerinsulating film 112 on the drain is removed by means of a patterningprocess, thus forming a drain contact hole 116. The source line contacthole 114 and the drain contact hole 116 are filled with a conductivematerial film and are then polished to form a source line contact plug118 and a drain contact plug 119, respectively.

A photoresist film is covered on the first interlayer insulating film112 having the source line contact hole 114 formed therein. Aphotolithography process using a photoresist film mask is then performedto form a second photoresist pattern (not shown) through which the drainregion is opened. It is possible to cover an anti-reflection film forfilling the source line contact hole 114 before the second photoresistpattern is formed.

It is effective that the drain region of the drain select transistor 130is opened since the device is a NAND flash device. The first interlayerinsulating film 112 is removed by means of an etch process using thesecond photoresist pattern as an etch mask, so that a drain contact hole116 is formed. The second photoresist pattern is removed by means of apredetermined photoresist film strip process.

A conductive material film is deposited on the entire structure. Theconductive film on the first interlayer insulating film 112 is thenremoved by means of a polishing process using the first interlayerinsulating film 112 as a stop layer, whereby a source line plug 118 anda drain contact plug 119 are formed. It is preferred that the polishingprocess is performed using blanket etch or chemical mechanical polishing(CMP). In this embodiment, it is effective that chemical mechanicalpolishing is used. It is possible to perform plug ion implantation inorder to maintain the properties of a cell junction before theconductive film is deposited. The conductive material film is preferablyformed using a polysilicon film.

Thereafter, a dual damascene process is carried out to form a bit lineon the drain contact plug and to form a common source line on the sourceline contact plug.

Referring to FIG. 3, FIG. 4D and FIG. 4E, a second interlayer insulatingfilm 122, an etch-stop layer 124 and a third interlayer insulating film126 are sequentially formed on the first interlayer insulating film 112having the source line plug 118 and the drain contact plug 119 formedtherein. An anti-reflection film 128 and a photoresist pattern 132 areformed on the third interlayer insulating film 126.

An anti-reflection film 128 being an organic bottom ARC for preventingdiffused reflection is formed on the third interlayer insulating film126. A photoresist film is covered on the anti-reflection film 126. Aphotolithography process using a photoresist film as a mask is performedto form a third photoresist pattern 132 for forming a bit line and acommon source line contact. A portion of the anti-reflection film 128,the third interlayer insulating film 126, the etch-stop layer 124 andthe second interlayer insulating film 122 are etched by means of an etchprocess using the third photoresist pattern 132 as an etch mask, forminga first trench 134 and a second trench 136. The first trench is formedover the source line plug 118 and the second trench 136 is formed overthe drain contact plug 119. The second trench is larger than the firsttrench 134.

The third photoresist pattern 132 and the anti-reflection film 128remaining on the third interlayer insulating film 126 are removed bymeans of a predetermined strip process. In the above, upon etching ofthe third interlayer insulating film 126, the etch-stop layer serves asa stop layer so that trenches 134 and 136 of a target depth andthickness can be formed.

Referring to FIG. 3, FIG. 4F and FIG. 4G, a portion of the secondinterlayer insulating film 122 below the trenches 134 and 136 arepatterned to form a first via hole 138 for a bit line and a second viahole 137 for a common source line, respectively. The contact, thetrenches 134 and 136 and the via holes 137 and 138 are filled with ametal film and are then polished, whereby a bit line 150, which iselectrically brought into contact with the drain contact plug 119, and acommon source line contact 160, which is electrically brought intocontact with the source line plug 118, are formed.

A photoresist film is covered on the entire structure on which the firsttrench 134 for the bit line and the second trench 136 for the commonsource line are formed. A photolithography process using a mask is thencarried out to form a fourth photoresist pattern (not shown) throughwhich the top of the drain contact plug 119 below the trench 134 for thebit line is opened and the top of the source line plug 118 below thesecond trench 136 for the source line is opened. The second interlayerinsulating film 122 is removed by means of an etch process using thefourth photoresist pattern as an etch mask. Thus, the first via hole 138for the bit line through which the drain contact plug 119 is opened isformed at the bottom of the bit line trench 134, and the second via hole137 for the source line through which the source line plug 118 is openedat the bottom of the second trench 136 for the common source line. Thefourth photoresist pattern is removed by means of a predetermined stripprocess.

An anti-diffusion film (not shown) is deposited on the entire structureand a metal film is then formed. The metal film on third interlayerinsulating film 126 is removed by a polishing process using the thirdinterlayer insulating film 126 as a stop layer, whereby a bit line 150,which is electrically brought into contact with the drain contact plug119, and a common source line contact 160, which is electrically broughtinto contact with the source line plug 118, are formed. After apassivation film or a barrier film 142 for protecting a metal wiring,the contact and the plug is covered on the entire structure, asubsequent upper metal wiring formation process is performed.

It is preferred that the first to third interlayer insulating films 112,122 and 126 are formed using a material film having an electricalinsulating property but are formed using a material film of a nitridefilm series and a material film of an oxide film series. The metal filmis preferably formed using at least one of a tungsten film, a copperfilm and an aluminum film.

According to the present invention described above, after a source lineplug hole is formed, a drain contact plug hole is formed. The holes arefilled with a conductive material film and are then polished. It istherefore possible to simplify the process since an ion implantationprocess, a conductive material film burial process and a blanket etchprocess step are omitted.

Moreover, according to the present invention, loss of a drain contactplug by the blanket etch process is prevented. It is thus possible toimprove the electrical properties of a device and reduce themanufacturing cost price.

Although the foregoing description has been made with reference to thepreferred embodiments, it is to be understood that changes andmodifications of the present invention may be made by the ordinaryskilled in the art without departing from the spirit and scope of thepresent invention and appended claims.

1. A method for manufacturing a NAND flash device comprising providing a semiconductor substrate on which a drain select transistor is formed for selecting a drain terminal of a flash cell and a source select transistor is formed for selecting a source terminal of the flash cell, wherein the drain select transistor and the source select transistor have drain region and a source region on the surface of the semiconductor substrate; forming a first interlayer insulating film over the semiconductor substrate; removing a portion of the first interlayer insulating film to form a source line contact hole, wherein the source region of the source select transistor is exposed at the bottom of the source line contact hole; removing a portion of the first interlayer insulating film to form a drain contact hole, wherein the drain region of the drain select transistor is exposed at the bottom of the drain contact hole; forming a source line plug and a drain contact plug in the source line contact hole and the drain contact hole, respectively; and forming a bit line connected to the drain contact plug and a common source line contact connected to the source line plug.
 2. The method of claim 1, wherein the forming of the bit line and the common source line contact comprises: forming at least of one insulating film over the semiconductor substrate including the source line plug and the drain contact plug; selectively etching the insulating film and forming a first trench and a second trench in the insulating film, wherein the first trench is formed over the drain contact plug and the second trench is formed over the source line plug; selectively etching the insulating film and forming a first via hole and a second via hole under the first trench and second trench respectively, wherein the first via hole exposes the drain contact plug and the second via hole exposes the source line plug; filling the first trench, the second trench, the first via hole and the second via hole with a metal film; and forming a bit line passing the first trench and the first via hole and a common source line contact passing the second trench and the second via hole by polishing the metal film.
 3. The method of claim 2, wherein the first trench is larger than the second trench.
 4. The method of claim 2, wherein the forming of the insulating film comprising: forming a second interlayer insulating film over the semiconductor substrate including the source line plug and the drain contact plug; forming an etch-stop layer on the second interlayer insulating layer; and forming a third interlayer insulating film on etch-stop layer.
 5. The method of claim 4, wherein the first and the second trenches are formed by selectively etching the third interlayer insulating film, the etch-stop layer and portions of the second interlayer insulating layer.
 6. The method of claim 5, wherein the first via hole and the second via hole are formed in the second interlayer insulating layer.
 7. The method of claim 2, further comprising the step of implanting impurities into the source region and the drain region which are exposed at the bottoms of the source line contact hole and the drain contact hole respectively.
 8. The method of claim 7, wherein the forming of the source line plug and the drain contact plug comprising: forming a conductive film over an entire structure including the source line contact hole and the drain contact hole; and performing a chemical mechanical polishing process to the conductive layer with the first interlayer insulating film as a stop layer.
 9. The method of claim 8, wherein the conductive layer is a polysilicon layer.
 10. (canceled)
 11. (canceled) 